双极晶体管 - 双极结型晶体管BJT GENRL TRANSISTOR
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
频率 100 MHz
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 150 mW
直流电流增益hFE 520
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.1 mm
宽度 1.24 mm
高度 0.85 mm
封装 SC-70-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC847CWT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC847CWT1G 安森美 | 完全替代 | BC847CWT3G和BC847CWT1G的区别 |
SBC847CWT1G 安森美 | 完全替代 | BC847CWT3G和SBC847CWT1G的区别 |
SBC847CWT3G 安森美 | 类似代替 | BC847CWT3G和SBC847CWT3G的区别 |