Infineon BCW61CE6327HTSA1 , PNP 双极晶体管, 100 mA, Vce=32 V, HFE:380, 250 MHz, 3引脚 SOT-23封装
通用 PNP ,
得捷:
TRANS PNP 32V 0.1A SOT23
欧时:
Infineon BCW61CE6327HTSA1 , PNP 双极晶体管, 100 mA, Vce=32 V, HFE:380, 250 MHz, 3引脚 SOT-23封装
艾睿:
Jump-start your electronic circuit design with this versatile PNP BCW61CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Verical:
Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PNP 32V 0.1A SOT-23
频率 250 MHz
额定电压DC -32.0 V
额定电流 -100 mA
极性 PNP
耗散功率 0.33 W
击穿电压集电极-发射极 32 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 250 @2mA, 5V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 For AF input stages and driver applications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCW61CE6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCW61CMTF 飞兆/仙童 | 功能相似 | BCW61CE6327HTSA1和BCW61CMTF的区别 |