BC817K40WH6327XTSA1

Infineon BC817K40WH6327XTSA1 , NPN 晶体管, 500 mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-323 SC-70封装

通用 NPN ，

得捷:
TRANS NPN 45V 0.5A SOT323

欧时:
Infineon BC817K40WH6327XTSA1 , NPN 晶体管, 500 mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-323 SC-70封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTOR

艾睿:
This specially engineered NPN BC817K40WH6327XTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 45V 0.5A 3-Pin SOT-323 T/R

Verical:
Trans GP BJT NPN 45V 0.5A 250mW Automotive 3-Pin SOT-323 T/R

Win Source:
TRANS NPN 45V 0.5A SOT323