SOT-23 NPN 45V 0.1A
If your circuit"s specifications require a device that can handle high levels of voltage, " NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 100 MHz
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 0.225 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 225 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
高度 1.12 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC847B-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
BC847BW-TP 美微科 | 类似代替 | BC847B-TP和BC847BW-TP的区别 |
BC847B,215 恩智浦 | 功能相似 | BC847B-TP和BC847B,215的区别 |
BC847C-13-F 美台 | 功能相似 | BC847B-TP和BC847C-13-F的区别 |