Infineon BCW66KFE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装
通用 NPN ，
得捷:
TRANS NPN 45V 0.8A SOT23
欧时:
Infineon BCW66KFE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装
贸泽:
双极晶体管 - 双极结型晶体管BJT AF TRANSISTORS
艾睿:
Infineon Technologies brings you the solution to your high-voltage BJT needs with their NPN BCW66KFE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
Chip1Stop:
Trans GP BJT NPN 45V 0.8A Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R
频率 170 MHz
极性 NPN
耗散功率 0.5 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 500 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 For general AF applications
RoHS标准 RoHS Compliant
含铅标准 无铅
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BCW66KFE6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCW 66F E6327 英飞凌 | 类似代替 | BCW66KFE6327HTSA1和BCW 66F E6327的区别 |