BCR158 系列 PNP 50 V 100 mA 表面贴装 硅 数字 晶体管 - SOT-323
双电阻器数字,
Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS PNP 250MW SOT323-3
立创商城:
1个PNP-预偏置 100mA 50V
欧时:
Infineon BCR158WH6327XTSA1 PNP 数字晶体管, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 3引脚 SOT-323 SC-70封装
贸泽:
双极晶体管 - 预偏置 AF DIGITAL TRANSISTORS
艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the PNP BCR158WH6327XTSA1 digital transistor from Infineon Technologies. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-323 T/R
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-323 T/R
Win Source:
TRANS PREBIAS PNP 250MW SOT323-3
极性 PNP
耗散功率 0.25 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 70 @5mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 200 MHz
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2 mm
宽度 1.25 mm
高度 0.8 mm
封装 SOT-323-3
工作温度 -65℃ ~ 150℃
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR158WH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
PDTA123JE,115 恩智浦 | 功能相似 | BCR158WH6327XTSA1和PDTA123JE,115的区别 |