BCW68GE6327HTSA1

Infineon BCW68GE6327HTSA1 , PNP 晶体管, 800mA, Vce=45 V, HFE:630, 200 MHz, 3引脚 SOT-23封装

通用 PNP ，

得捷:
TRANS PNP 45V 0.8A SOT23

欧时:
Infineon BCW68GE6327HTSA1 , PNP 晶体管, 800mA, Vce=45 V, HFE:630, 200 MHz, 3引脚 SOT-23封装

艾睿:
Compared to other transistors, the PNP BCW68GE6327HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 2 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 2 V.

Chip1Stop:
Trans GP BJT PNP 45V 0.8A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 45V 0.8A SOT-23