BCW68HE6327HTSA1

BCW68 系列 PNP 45 V 800 mA 表面贴装 硅 AF 晶体管 - SOT-23-3

Summary of Features:

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High current gain

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Low collector-emitter saturation voltage

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Complementary types: BCW66... NPN

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Pb-free RoHS compliant package1

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Qualified according AEC Q103

得捷:
TRANS PNP 45V 0.8A SOT23

艾睿:
Infineon Technologies has the solution to your circuit&s;s high-voltage requirements with their PNP BCW68HE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 2 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT PNP 45V 0.8A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 45V 0.8A SOT23 / Bipolar BJT Transistor PNP 45 V 800 mA 200MHz 330 mW Surface Mount PG-SOT23