PNP硅晶体管数字 PNP Silicon Digital Transistor
双电阻器数字,
Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS PNP 50V SOT23-3
欧时:
Infineon BCR555E6327HTSA1 PNP 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.22, 3引脚 SOT-23封装
艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP BCR555E6327HTSA1 digital transistor from Infineon Technologies is for you. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
Chip1Stop:
Trans Digital BJT PNP 50V 500mA Automotive 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT PNP 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PREBIAS PNP 0.33W SOT23-3
额定电压DC -50.0 V
额定电流 -500 mA
极性 PNP
耗散功率 0.33 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 500mA
最小电流放大倍数hFE 70 @50mA, 5V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 150 MHz
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
工作温度 -65℃ ~ 150℃
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR555E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCR555E6433HTMA1 英飞凌 | 完全替代 | BCR555E6327HTSA1和BCR555E6433HTMA1的区别 |
UNR212400L 松下 | 功能相似 | BCR555E6327HTSA1和UNR212400L的区别 |