晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 60 hFE
The RF amplifier from Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
得捷:
RF TRANS NPN 12V 10.5GHZ SOT143B
e络盟:
晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 60 hFE
艾睿:
Trans GP BJT NPN 16V 0.05A Automotive 4-Pin3+Tab SOT-143B T/R
安富利:
Trans GP NPN 12V 0.03A 4-Pin SOT-143B T/R
Verical:
Trans GP BJT NPN 16V 0.05A 4-Pin3+Tab SOT-143B T/R
针脚数 4
耗散功率 450 mW
输入电容 0.74 pF
击穿电压集电极-发射极 12 V
增益 20 dB
最小电流放大倍数hFE 60 @5mA, 8V
额定功率Max 450 mW
直流电流增益hFE 60
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 450 mW
安装方式 Surface Mount
引脚数 4
封装 TO-253-4
封装 TO-253-4
材质 Silicon
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99