晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 95 hFE
Look no further than the RF bi-polar junction transistor, developed by Semiconductors, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
得捷:
RF TRANS NPN 12V 10.5GHZ SOT143R
贸泽:
射频RF双极晶体管 NPN wideband silicon RF transistor
e络盟:
晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 95 hFE
艾睿:
Look no further than the BFU520XRR RF bi-polar junction transistor, developed by NXP Semiconductors, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
针脚数 4
耗散功率 450 mW
输入电容 0.55 pF
击穿电压集电极-发射极 12 V
增益 20 dB
最小电流放大倍数hFE 60 @5mA, 8V
最大电流放大倍数hFE 200
额定功率Max 450 mW
直流电流增益hFE 95
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 450 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-143-4
封装 SOT-143-4
材质 Silicon
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99