BCR141WH6327XTSA1

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BCR141WH6327XTSA1概述

Infineon BCR141WH6327XTSA1 NPN 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 3引脚 SOT-323 SC-70封装

双电阻器数字,

Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。


得捷:
TRANS PREBIAS NPN 250MW SOT323-3


欧时:
Infineon BCR141WH6327XTSA1 NPN 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 3引脚 SOT-323 SC-70封装


贸泽:
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR


艾睿:
Compared to traditional BJ transistors, the NPN BCR141WH6327XTSA1 digital transistor from Infineon Technologies is meant to be used with digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R


Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-323 T/R


Win Source:
TRANS PREBIAS NPN 250MW SOT323-3


BCR141WH6327XTSA1中文资料参数规格
技术参数

极性 NPN

耗散功率 0.25 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 50 @5mA, 5V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 130 MHz

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-323-3

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.8 mm

封装 SOT-323-3

其他

产品生命周期 Obsolete

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买BCR141WH6327XTSA1
型号: BCR141WH6327XTSA1
描述:Infineon BCR141WH6327XTSA1 NPN 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 3引脚 SOT-323 SC-70封装

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