双极晶体管 - 预偏置 PNP Silicon Digital TRANSISTOR
Summary of Features:
得捷:
TRANS PREBIAS PNP 300MW SOT23-3
立创商城:
BCR553E6327HTSA1
贸泽:
双极晶体管 - 预偏置 PNP Silicon Digital TRANSISTOR
艾睿:
Are you looking to build a digital signal processing device? The PNP BCR553E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT PNP 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PREBIAS PNP 300MW SOT23-3
额定电压DC -50.0 V
额定电流 -500 mA
极性 PNP
耗散功率 0.33 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 500mA
最小电流放大倍数hFE 40 @50mA, 5V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 150 MHz
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -65℃ ~ 150℃
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR553E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
PDTB123EK,115 恩智浦 | 功能相似 | BCR553E6327HTSA1和PDTB123EK,115的区别 |