BCR35PNH6327XTSA1

Infineon BCR35PNH6327XTSA1 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚

双电阻器双数字，

得捷:
TRANS PREBIAS NPN/PNP 50V SOT363

欧时:
Infineon BCR35PNH6327XTSA1 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚

艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the npn and PNP BCR35PNH6327XTSA1 digital transistor from Infineon Technologies is for you. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R

Verical:
Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R

Win Source:
TRANS NPN/PNP PREBIAS SOT363