BCR185SH6327XTSA1

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BCR185SH6327XTSA1概述

Infineon BCR185SH6327XTSA1 双 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚

双电阻器双数字,


得捷:
TRANS 2PNP PREBIAS 0.25W SOT363


立创商城:
2个PNP-预偏置 100mA 50V


欧时:
Infineon BCR185SH6327XTSA1 双 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚


艾睿:
In contrast to traditional transistors, Infineon Technologies&s; PNP BCR185SH6327XTSA1 digital transistor&s;s can be used in a wide variety of digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.


安富利:
Trans Digital BJT PNP 50V 100mA 6-Pin SOT-363 T/R


Verical:
Trans Digital BJT PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R


Win Source:
TRANS 2PNP PREBIAS 0.25W SOT363


BCR185SH6327XTSA1中文资料参数规格
技术参数

极性 PNP

耗散功率 0.25 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 70 @5mA, 5V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 200 MHz

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SOT-363-6

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.8 mm

封装 SOT-363-6

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买BCR185SH6327XTSA1
型号: BCR185SH6327XTSA1
描述:Infineon BCR185SH6327XTSA1 双 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚
替代型号BCR185SH6327XTSA1
型号/品牌 代替类型 替代型号对比

BCR185SH6327XTSA1

Infineon 英飞凌

当前型号

当前型号

DDA114YU-7

美台

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BCR185SH6327XTSA1和DDA114YU-7的区别

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