BCR133SH6433XTMA1

SOT-363 NPN 50V 100mA

- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式（双） 50V 100mA 130MHz 250mW 表面贴装型 PG-SOT363-6

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

贸泽:
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS

艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR133SH6433XTMA1 digital transistor from Infineon Technologies is for you. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a dual configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363