单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
双电阻器双数字,
得捷:
TRANS 2NPN PREBIAS 0.25W SOT363
立创商城:
2个NPN-预偏置 100mA 50V
欧时:
Infineon BCR108SH6327XTSA1 双 NPN 数字晶体管, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 6引脚 SOT-363 SC-88封装
贸泽:
双极晶体管 - 预偏置 AF DIGITAL TRANSISTORS
艾睿:
Infineon Technologies brings you their latest NPN BCR108SH6327XTSA1 digital transistor, a component that can easily provide you with most of the features of traditional BJT&s;s while maintaining a digital form. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R
Verical:
Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R
Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363
极性 NPN
耗散功率 0.25 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 70 @5mA, 5V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 170 MHz
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363-6
长度 2 mm
宽度 1.25 mm
高度 0.8 mm
封装 SOT-363-6
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR108SH6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCR108SH6433XTMA1 英飞凌 | 类似代替 | BCR108SH6327XTSA1和BCR108SH6433XTMA1的区别 |