500mW，BZT52B 系列，Taiwan Semiconductor小信号 500mW 齐纳二极管 电压容差为 2% 表面安装外壳，SOD-123F ### 齐纳二极管，Taiwan Semiconductor
齐纳 500mW，BZT52B 系列，
小信号 500mW
电压容差为 2%
表面安装外壳，SOD-123F
### 齐纳二极管，Taiwan Semiconductor
欧时:
Taiwan Semiconductor BZT52B3V3 RH 单路 齐纳二极管, 3.3V 2% 500 mW, 2引脚 SOD-123F封装
艾睿:
This BZT52B3V3 RH zener diode from Taiwan Semiconductor is perfect for your circuit requiring a diode to operate in the reverse-breakdown region. Its maximum power dissipation is 500 mW. Its maximum leakage current is 4.5 μA. Its test current is 5 mA. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This zener diode has a minimum operating temperature of -65 °C and a maximum of 150 °C. This zener device has a nominal voltage of 3.3 V and a voltage tolerance of 2%. It is made in a single configuration.
Allied Electronics:
Zener Diode 3.3V 2% 500mW SOD123F
Verical:
Zener Diode Single 3.3V 2% 95Ohm 500mW 2-Pin SOD-123F T/R