BCR22PNH6433XTMA1

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BCR22PNH6433XTMA1概述

Infineon BCR22PNH6433XTMA1 双 NPN + PNP 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 SOT-363 SC-88封装

双电阻器双数字,


得捷:
TRANS NPN/PNP PREBIAS SOT363


欧时:
Infineon BCR22PNH6433XTMA1 双 NPN + PNP 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 SOT-363 SC-88封装


艾睿:
Look no further than Infineon Technologies&s; npn and PNP BCR22PNH6433XTMA1 digital transistor&s;s, the ideal component to use when designing a digital signal processing unit. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.


安富利:
Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/R


Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R


BCR22PNH6433XTMA1中文资料参数规格
技术参数

耗散功率 250 mW

击穿电压集电极-发射极 50 V

最小电流放大倍数hFE 50 @5mA, 5V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 130 MHz

耗散功率Max 250 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SOT-363-6

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.8 mm

封装 SOT-363-6

物理参数

工作温度 -65℃ ~ 150℃

其他

产品生命周期 Not For New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买BCR22PNH6433XTMA1
型号: BCR22PNH6433XTMA1
描述:Infineon BCR22PNH6433XTMA1 双 NPN + PNP 数字晶体管, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 SOT-363 SC-88封装
替代型号BCR22PNH6433XTMA1
型号/品牌 代替类型 替代型号对比

BCR22PNH6433XTMA1

Infineon 英飞凌

当前型号

当前型号

BCR22PNH6327XTSA1

英飞凌

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BCR22PNH6433XTMA1和BCR22PNH6327XTSA1的区别

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