Infineon BCR503E6327HTSA1 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23封装
双电阻器数字,
Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS NPN 50V SOT23-3
欧时:
Infineon BCR503E6327HTSA1 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23封装
贸泽:
Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 500MA
艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR503E6327HTSA1 digital transistor from Infineon Technologies is for you. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
Chip1Stop:
Trans Digital BJT NPN 50V 500mA Automotive 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PREBIAS NPN 300MW SOT23-3
额定电压DC 50.0 V
额定电流 500 mA
极性 NPN
耗散功率 0.33 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 500mA
最小电流放大倍数hFE 40 @50mA, 5V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 100 MHz
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.9 mm
封装 SOT-23-3
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCR503E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
UNR222100L 松下 | 功能相似 | BCR503E6327HTSA1和UNR222100L的区别 |
PDTD123EK,115 恩智浦 | 功能相似 | BCR503E6327HTSA1和PDTD123EK,115的区别 |