晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 20 hFE
Look no further than the RF bi-polar junction transistor, developed by Technologies, which can offer high radio frequency power compatibility. This product"s minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 2500 MHz
针脚数 3
耗散功率 280 mW
输入电容 0.9 pF
击穿电压集电极-发射极 15 V
最小电流放大倍数hFE 40 @2mA, 1V
额定功率Max 280 mW
直流电流增益hFE 20
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 280 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
封装 SOT-323-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Wireless Communications, For amplifier and oscillator applications in RF Front-end
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99