通用晶体管PNP硅 General Purpose Transistors PNP Silicon
- 双极 BJT - 单 PNP 45 V 100 mA 100MHz 300 mW 表面贴装型 SOT-23-3(TO-236)
得捷:
TRANS PNP 45V 0.1A SOT23-3
立创商城:
BC857CLT3G
艾睿:
The versatility of this PNP BC857CLT3G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 45V 0.1A 300mW 3-Pin SOT-23 T/R
频率 100 MHz
极性 PNP
耗散功率 0.3 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
最大电流放大倍数hFE 420 @2mA, 5V
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC857CLT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC857CLT1G 安森美 | 类似代替 | BC857CLT3G和BC857CLT1G的区别 |
SBC857CLT1G 安森美 | 类似代替 | BC857CLT3G和SBC857CLT1G的区别 |
BC857CLT1 安森美 | 类似代替 | BC857CLT3G和BC857CLT1的区别 |