BCV62BE6433HTMA1

BCV62 系列 PNP 30 V 100 mA 表面贴装 硅 双 晶体管 - SOT-143-4

Bipolar BJT Transistor Array 2 PNP Dual 30V 100mA 250MHz 300mW Surface Mount PG-SOT143-4

得捷:
TRANS 2PNP 30V 0.1A SOT143

艾睿:
Implement this PNP BCV62BE6433HTMA1 GP BJT from Infineon Technologies to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT PNP 30V 0.1A 4-Pin3+Tab SOT-143 T/R