BC 系列 30 V 100 mA 表面贴装 NPN/PNP 硅 双 通用 晶体管 SOT-23
- 双极 BJT - 阵列 NPN,PNP 30V 100mA 100MHz 250mW 表面贴装型 SC-88/SC70-6/SOT-363
欧时:
SS SC88 GP XSTR DUAL 30V
得捷:
TRANS NPN/PNP 30V 0.1A SOT363
立创商城:
BC848CPDW1T1G
贸泽:
Bipolar Transistors - BJT 100mA 30V Dual Complementary
e络盟:
双极晶体管阵列, NPN, PNP, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
艾睿:
Implement this npn and PNP BC848CPDW1T1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
ON Semi BC848CPDW1T1G NPN Bipolar Transistor, 0.1 A, 30 V, 6-Pin SOT-363
安富利:
Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R
Chip1Stop:
Trans GP BJT NPN/PNP 30V 0.1A Automotive 6-Pin SOT-363 T/R
Verical:
Trans GP BJT NPN/PNP 30V 0.1A Automotive 6-Pin SOT-363 T/R
Newark:
# ON SEMICONDUCTOR BC848CPDW1T1G TRANSISTOR ARRAY, DUAL N&P, 30V, SOT-363 New
DeviceMart:
TRANS NPN/PNP DUAL 30V SOT-363
Win Source:
TRANS NPN/PNP 30V 0.1A SOT363
频率 100 MHz
额定电压DC 30.0 V
额定电流 100 mA
针脚数 6
极性 NPN, PNP
耗散功率 380 mW
增益频宽积 100 MHz
击穿电压集电极-发射极 30 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 420 @2mA, 5V
额定功率Max 250 mW
直流电流增益hFE 420
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 380 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 0.9 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC848CPDW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC848CPDW1T1 安森美 | 类似代替 | BC848CPDW1T1G和BC848CPDW1T1的区别 |
BC848CPDW 乐山无线电 | 功能相似 | BC848CPDW1T1G和BC848CPDW的区别 |