FAIRCHILD SEMICONDUCTOR BS270_D74Z 晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The is a N-channel enhancement-mode FET produced using "s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
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- High density cell design for low RDS ON
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- Voltage controlled small signal switch
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- High saturation current capability
额定电压DC 60.0 V
额定电流 400 mA
通道数 1
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 625 mW
阈值电压 2.1 V
输入电容 20.0 pF
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 400 mA
输入电容Ciss 50pF @25VVds
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 625mW Ta
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BS270_D74Z Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
BS270 飞兆/仙童 | 类似代替 | BS270_D74Z和BS270的区别 |
BS270D74Z 飞兆/仙童 | 功能相似 | BS270_D74Z和BS270D74Z的区别 |