FAIRCHILD SEMICONDUCTOR BS170_D27Z 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The is a N-channel enhancement-mode FET produced using "s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
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- High density cell design for low RDS ON
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- Voltage controlled small signal switch
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- Rugged and reliable
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- High saturation current capability
额定电压DC 60.0 V
额定电流 500 mA
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 830 mW
阈值电压 2.1 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 500 mA
输入电容Ciss 40pF @10VVds
额定功率Max 830 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 830mW Ta
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BS170_D27Z Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
BS170_D26Z 飞兆/仙童 | 完全替代 | BS170_D27Z和BS170_D26Z的区别 |
BS170_D75Z 飞兆/仙童 | 完全替代 | BS170_D27Z和BS170_D75Z的区别 |
BS170 飞兆/仙童 | 类似代替 | BS170_D27Z和BS170的区别 |