BSD235NH6327XTSA1

Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSD235NH6327XTSA1, 950 mA, Vds=20 V, 6引脚 SOT-363 SC-88封装

OptiMOS™2 功率 MOSFET 系列

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET 2N-CH 20V 0.95A SOT363

欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSD235NH6327XTSA1, 950 mA, Vds=20 V, 6引脚 SOT-363 SC-88封装

e络盟:
双路场效应管, MOSFET, N沟道, 20 V, 950 mA, 0.266 ohm, SOT-363, 表面安装

艾睿:
Make an effective common source amplifier using this BSD235NH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R

TME:
Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363

Verical:
Trans MOSFET N-CH 20V 0.95A Automotive 6-Pin SOT-363 T/R

Win Source:
MOSFET 2N-CH 20V 0.95A SOT363