功率MOSFET的单P沟道SOT- 23 -50 V, 10 ? Power MOSFET Single P-Channel SOT-23 -50 V, 10
表面贴装型 P 通道 50 V 130mA(Ta) 225mW(Ta) SOT-23-3(TO-236)
立创商城:
BVSS84LT1G
得捷:
MOSFET P-CH 50V 130MA SOT23-3
欧时:
PFET SOT23 50V 130MA 10.0
e络盟:
功率场效应管, MOSFET, P沟道, 50 V, 130 mA, 4.7 ohm, SOT-23, 表面安装
艾睿:
Create an effective common drain amplifier using this BVSS84LT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Verical:
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
Win Source:
MOSFET P-CH 50V 130MA SOT-23-3
无卤素状态 Halogen Free
针脚数 3
漏源极电阻 4.7 Ω
耗散功率 0.225 W
阈值电压 2 V
漏源极电压Vds 50 V
上升时间 9.7 ns
输入电容Ciss 36pF @5VVds
额定功率Max 225 mW
下降时间 1.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BVSS84LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SBSS84LT1G 安森美 | 完全替代 | BVSS84LT1G和SBSS84LT1G的区别 |
BSS84 安森美 | 类似代替 | BVSS84LT1G和BSS84的区别 |
BSS84LT1 乐山无线电 | 功能相似 | BVSS84LT1G和BSS84LT1的区别 |