高电流晶体管 High Current Transistors
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 200 MHz
额定电压DC 60.0 V
额定电流 1.00 A
极性 NPN
耗散功率 0.625 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 1A
最小电流放大倍数hFE 40 @150mA, 2V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC637G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC637 安森美 | 类似代替 | BC637G和BC637的区别 |