ON SEMICONDUCTOR BSP16T1G 单晶体管 双极, PNP, -300 V, 15 MHz, 1.5 W, -100 mA, 30 hFE
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
频率 15 MHz
额定电压DC -300 V
额定电流 -1.00 A
针脚数 4
极性 PNP
耗散功率 1.5 W
增益频宽积 15 MHz
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 30 @50mA, 10V
额定功率Max 1.5 W
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.57 mm
封装 TO-261-4
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2016/06/20
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSP16T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BSP16T1 安森美 | 类似代替 | BSP16T1G和BSP16T1的区别 |
BSP16 恩智浦 | 功能相似 | BSP16T1G和BSP16的区别 |
BCP55-16TA 美台 | 功能相似 | BSP16T1G和BCP55-16TA的区别 |