BSS205NH6327XTSA1

Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSS205NH6327XTSA1, 2.5 A, Vds=20 V, 3引脚 SOT-23封装

OptiMOS™2 功率 MOSFET 系列

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 20V 2.5A SOT23-3

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSS205NH6327XTSA1, 2.5 A, Vds=20 V, 3引脚 SOT-23封装

立创商城:
N沟道 20V 2.5A

e络盟:
功率场效应管, MOSFET, N沟道, 20 V, 2.5 A, 0.04 ohm, SOT-23, 表面安装

艾睿:
Use Infineon Technologies&s; BSS205NH6327XTSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

Chip1Stop:
Trans MOSFET N-CH 20V 2.5A Automotive 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23

Verical:
Trans MOSFET N-CH 20V 2.5A Automotive 3-Pin SOT-23 T/R

Win Source:
MOSFET N-CH 20V 2.5A SOT23