SOT-223 NPN 45V 1A
Implement this versatile NPN GP BJT from Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCP5416E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCP54-16E6433 英飞凌 | 完全替代 | BCP5416E6327HTSA1和BCP54-16E6433的区别 |
BCP54-16E6327 英飞凌 | 完全替代 | BCP5416E6327HTSA1和BCP54-16E6327的区别 |
BCP5416QTA 美台 | 类似代替 | BCP5416E6327HTSA1和BCP5416QTA的区别 |