晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
Summary of Features:
欧时:
Infineon BFR193FH6327XTSA1
得捷:
RF TRANS NPN 12V 8GHZ TSFP-3
贸泽:
射频RF双极晶体管 RF BIP TRANSISTOR
e络盟:
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
艾睿:
In addition to offering the benefits of traditional BJTs, the BFR193FH6327XTSA1 RF amplifier from Infineon Technologies is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans GP BJT NPN 12V 0.08A 3-Pin TSFP T/R
Verical:
Trans RF BJT NPN 12V 0.08A Automotive 3-Pin TSFP T/R
Win Source:
TRANS RF NPN 12V 80MA TSFP-3
频率 8000 MHz
针脚数 3
耗散功率 580 mW
输入电容 2.25 pF
击穿电压集电极-发射极 12 V
增益 12.5 dB
最小电流放大倍数hFE 70 @30mA, 8V
额定功率Max 580 mW
直流电流增益hFE 70
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 580 mW
安装方式 Surface Mount
引脚数 3
封装 PG-TSFP-3
封装 PG-TSFP-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Wireless Communications, For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems., LNA in RF Front-end
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99