BSP52

FAIRCHILD SEMICONDUCTOR  BSP52  达林顿双极性晶体管

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 90V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-EmitterVoltageVCEO| 80V 集电极连续输出电流ICCollector CurrentIC| 800mA/0.8A 截止频率fTTranstion FrequencyfT| 直流电流增益hFEDC Current GainhFE| 2000 @ 10V,0.5A 管压降VCE（sat）Collector-Emitter SaturationVoltage| 1.3V 耗散功率PcPower Dissipation| 1W Description & Applications| • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. 描述与应用| •为需要集电流增益可达到500mA而设计

得捷:
TRANS NPN DARL 80V 0.8A SOT-223

欧时:
### 复合 NPN 晶体管，Fairchild Semiconductor### 双极晶体管，Fairchild Semiconductor双极性结点晶体管 BJT 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。

贸泽:
Darlington Transistors NPN Transistor Darlington

e络盟:
FAIRCHILD SEMICONDUCTOR  BSP52..  达林顿双极性晶体管

艾睿:
Trans Darlington NPN 80V 0.8A 4-Pin3+Tab SOT-223 T/R

安富利:
Trans Darlington NPN 80V 0.8A 4-Pin3+Tab SOT-223 T/R

富昌:
NPN 1 W 80 V 800 mA 表面贴装 达林顿晶体管 - SOT-223-3

Chip1Stop:
Trans Darlington NPN 80V 0.8A 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: NPN; bipolar; Darlington; 80V; 800mA; 1W; SOT223-4

Verical:
Trans Darlington NPN 80V 1A 1250mW Automotive 4-Pin3+Tab SOT-223 T/R

Newark:
# FAIRCHILD SEMICONDUCTOR  BSP52  Bipolar BJT Single Transistor, Darlington, NPN, 80 V, 200 MHz, 1 W, 800 mA, 2000 hFE

Win Source:
TRANS NPN DARL 80V 0.8A SOT-223