电压和电流均为负 Voltage and Current are Negative
Implement this versatile PNP GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 65 MHz
额定电压DC -20.0 V
额定电流 -1.00 A
额定功率 800 mW
极性 PNP
耗散功率 0.625 W
击穿电压集电极-发射极 20 V
集电极最大允许电流 1A
最小电流放大倍数hFE 85 @500mA, 1V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC369ZL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC369 安森美 | 完全替代 | BC369ZL1G和BC369的区别 |
BC369ZL1 安森美 | 类似代替 | BC369ZL1G和BC369ZL1的区别 |
BC369G 安森美 | 类似代替 | BC369ZL1G和BC369G的区别 |