ON SEMICONDUCTOR BC327-40ZL1G 单晶体管 双极, PNP, -45 V, 260 MHz, 1.5 W, -800 mA, 250 hFE
Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
频率 260 MHz
额定电压DC -45.0 V
额定电流 -800 mA
针脚数 3
极性 PNP
耗散功率 1.5 W
增益频宽积 260 MHz
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 250 @100mA, 1V
额定功率Max 1.5 W
直流电流增益hFE 250
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC327-40ZL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC327-40ZL1 安森美 | 完全替代 | BC327-40ZL1G和BC327-40ZL1的区别 |
BC32725TA 飞兆/仙童 | 功能相似 | BC327-40ZL1G和BC32725TA的区别 |
BC32716TA 飞兆/仙童 | 功能相似 | BC327-40ZL1G和BC32716TA的区别 |