BC337-040G

放大器晶体管 Amplifier Transistors

Bipolar BJT Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92-3

得捷:
TRANS NPN 45V 0.8A TO92

贸泽:
双极晶体管 - 双极结型晶体管BJT 800mA 50V NPN

艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN BC337-040G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Verical:
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Box

罗切斯特:
Trans GP BJT NPN 45V 0.8A 3-Pin TO-92 Box