INFINEON BF998E6327HTSA1 晶体管, MOSFET, N沟道, 30 mA, 12 V
双栅极 MOSFET 四极管
Infineon 双栅极低噪声四极管 MOSFET 射频
欧时:
Infineon Si N沟道 MOSFET 四极管 BF998E6327HTSA1, 30 mA, Vds=12 V, 4引脚 SOT-143封装
得捷:
MOSFET N-CH 12V 200MA SOT-143
贸泽:
RF MOSFET Transistors N-CH 12 V 30 mA
艾睿:
Ideal for radio frequency environments this BF998E6327HTSA1 RF amplifier from Infineon Technologies is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in depletion mode.
安富利:
Trans MOSFET N-CH 12V 0.03A 4-Pin SOT-143 T/R
Chip1Stop:
Trans RF MOSFET N-CH 12V 0.03A Automotive 4-Pin3+Tab SOT-143 T/R
Verical:
Trans RF MOSFET N-CH 12V 0.03A Automotive 4-Pin3+Tab SOT-143 T/R
Newark:
# INFINEON BF998E6327HTSA1 MOSFET Transistor, N Channel, 30 mA, 12 V
频率 45 MHz
额定电压DC 12.0 V
额定电流 30.0 mA
针脚数 4
极性 N-Channel
耗散功率 200 mW
漏源极电压Vds 12 V
连续漏极电流Ids 300 mA
增益 28 dB
测试电流 10 mA
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
额定电压 12 V
安装方式 Surface Mount
引脚数 4
封装 TO-253-4
长度 2.9 mm
宽度 1 mm
高度 1.3 mm
封装 TO-253-4
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, Car Radio, 通信与网络, Audio, 音频, Set Top Box, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
