SOT-89 NPN 60V 0.5A
Traditional transistors can produce low current gains. One of Technologies" NPN Darlington transistors can provide you with the much higher values you need. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5V|2000@100uA@1 V|2000@500mA@5V|4000@10mA@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
极性 NPN
耗散功率 1000 mW
击穿电压集电极-发射极 60 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 10000 @100mA, 5V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 150 MHz
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89
高度 1.5 mm
封装 SOT-89
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCV49E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BCV49TA 美台 | 功能相似 | BCV49E6327HTSA1和BCV49TA的区别 |
BCV49,115 恩智浦 | 功能相似 | BCV49E6327HTSA1和BCV49,115的区别 |