BCX6825H6327XTSA1

Infineon BCX6825H6327XTSA1 , NPN 晶体管, 1 A, Vce=20 V, HFE:50, 3引脚 SOT-89封装

通用 NPN ，

得捷:
TRANS NPN 20V 1A SOT89

欧时:
Infineon BCX6825H6327XTSA1 , NPN 晶体管, 1 A, Vce=20 V, HFE:50, 3引脚 SOT-89封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTORS

艾睿:
Implement this NPN BCX6825H6327XTSA1 GP BJT from Infineon Technologies to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 20V 1A AEC Q101 4-Pin3+Tab SOT-89 T/R

TME:
Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89

Verical:
Trans GP BJT NPN 20V 1A 3000mW Automotive 4-Pin3+Tab SOT-89 T/R