INFINEON BSR316PL6327HTSA1 晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
The BSR316P L6327 is a P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
针脚数 3
漏源极电阻 1.3 Ω
极性 P-Channel
耗散功率 500 mW
漏源极电压Vds 100 V
连续漏极电流Ids 0.36A
输入电容Ciss 165pF @25VVds
工作温度Max 150 ℃
耗散功率Max 500mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 Power Management, Automotive, 车用, Computers & Computer Peripherals, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSR316PL6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSR316PH6327XTSA1 英飞凌 | 类似代替 | BSR316PL6327HTSA1和BSR316PH6327XTSA1的区别 |