Infineon Si N沟道 MOSFET 四极管 BF5030WH6327XTSA1, 25 mA, Vds=8 V, 4引脚 SOT-343封装
双栅极 MOSFET 四极管
Infineon 双栅极低噪声四极管 MOSFET 射频
得捷:
FET RF 8V 800MHZ SOT343
欧时:
Infineon Si N沟道 MOSFET 四极管 BF5030WH6327XTSA1, 25 mA, Vds=8 V, 4引脚 SOT-343封装
艾睿:
Infineon Technologies offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this BF5030WH6327XTSA1 RF amplifier. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 8V 0.025A 4-Pin SOT-343 T/R
Chip1Stop:
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin3+Tab SOT-343 T/R
TME:
Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT
Verical:
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin3+Tab SOT-343 T/R
Win Source:
FET RF 8V 800MHZ SOT343
频率 800 MHz
额定电流 25 mA
针脚数 4
耗散功率 200 mW
漏源极电压Vds 8 V
增益 24 dB
测试电流 10 mA
输入电容Ciss 2.8pF @5VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
额定电压 8 V
安装方式 Surface Mount
引脚数 4
封装 SOT-343
长度 2 mm
宽度 1.25 mm
高度 0.9 mm
封装 SOT-343
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Set Top Box
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99