BFU910FX

晶体管 双极-射频, NPN, 2 V, 90 GHz, 300 mW, 15 mA, 1200 hFE

Designed with semiconductor technology, this RF amplifier from Semiconductors easily operates at high RF frequencies. This product"s minimum DC current gain is 655. It has a maximum collector emitter saturation voltage of 1 V. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C.