BD788G

ON SEMICONDUCTOR  BD788G.  双极性晶体管, PNP -60V TO-225

The is a 4A PNP bipolar complementary silicon Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications.

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Complementary device

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Low collector-emitter sustaining voltage VCEOsus 60VDC minimum

得捷:
TRANS PNP 60V 4A TO126

立创商城:
PNP 60V 4A

贸泽:
双极晶体管 - 双极结型晶体管BJT BIP PNP 4A 60V

e络盟:
单晶体管 双极, 通用, PNP, 60 V, 50 MHz, 15 W, -4 A, 40 hFE

艾睿:
If you require a general purpose BJT that can handle high voltages, then the PNP BD788G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT PNP 60V 4A 3-Pin TO-225 Bulk

Chip1Stop:
Trans GP BJT PNP 60V 4A 3-Pin TO-225 Bulk

Verical:
Trans GP BJT PNP 60V 4A 15000mW 3-Pin3+Tab TO-225 Box

Newark:
# ON SEMICONDUCTOR  BD788G  Bipolar BJT Single Transistor, General Purpose, PNP, 60 V, 50 MHz, 15 W, -4 A, 40 hFE