BSS606NH6327XTSA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSS606NH6327XTSA1, 3.2 A, Vds=60 V, 4引脚 PG-SOT-89封装

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 60V 3.2A SOT89

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSS606NH6327XTSA1, 3.2 A, Vds=60 V, 4引脚 PG-SOT-89封装

立创商城:
N沟道 60V 3.2A

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSS606NH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos 3 technology.

Chip1Stop:
Trans MOSFET N-CH 60V 3.2A Automotive T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89

Verical:
Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin3+Tab SOT-89 T/R