P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
OptiMOS™2 功率 MOSFET 系列
Infineon 得捷:
MOSFET 2N-CH 30V 2.3A 6TSOP
欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSL306NH6327XTSA1, 2.3 A, Vds=30 V, 6引脚 TSOP封装
e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 2.3 A, 0.043 ohm, TSOP, 表面安装
艾睿:
Create an effective common drain amplifier using this BSL306NH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
安富利:
Trans MOSFET N-CH 30V 2.3A 6-Pin TSOP T/R
富昌:
30V 2.3A 57mΩ N-ch TSOP-6 dual
Chip1Stop:
Trans MOSFET N-CH 30V 2.3A Automotive 6-Pin TSOP T/R
TME:
Transistor: N-MOSFET x2; unipolar; 30V; 2.3A; 500mW; TSOP6
Verical:
Trans MOSFET N-CH 30V 2.3A Automotive 6-Pin TSOP T/R
Win Source:
MOSFET 2N-CH 30V 2.3A 6TSOP
额定功率 500 mW
针脚数 6
漏源极电阻 0.043 Ω
极性 N-CH
耗散功率 500 mW
阈值电压 1.6 V
漏源极电压Vds 30 V
连续漏极电流Ids 2.3A
上升时间 2.3 ns
输入电容Ciss 275pF @15VVds
额定功率Max 500 mW
下降时间 1.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 2.9 mm
宽度 1.6 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger
RoHS标准 RoHS Compliant
含铅标准 Lead Free