ON SEMICONDUCTOR BC327-25RL1G 双极晶体管
Implement this versatile PNP GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 260 MHz
额定电压DC -45.0 V
额定电流 -800 mA
针脚数 3
极性 PNP, P-Channel
耗散功率 1.5 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 160 @100mA, 1V
额定功率Max 1.5 W
直流电流增益hFE 160
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BC327-25RL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC327-25ZL1G 安森美 | 类似代替 | BC327-25RL1G和BC327-25ZL1G的区别 |
BC327-025G 安森美 | 类似代替 | BC327-25RL1G和BC327-025G的区别 |
BC327-25ZL1 安森美 | 类似代替 | BC327-25RL1G和BC327-25ZL1的区别 |