晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV
Summary of Features:
得捷:
MOSFET N-CH 20V 7.5A TSOP-6
贸泽:
MOSFET SMALL SIGNALN-CH
e络盟:
晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV
艾睿:
Compared to traditional transistors, BSL802SNH6327XTSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R
Chip1Stop:
OPTIMOS 2 SMALL-SIGNAL-TRANSISTOR
TME:
Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Win Source:
MOSFET N-CH 20V 7.5A 6TSOP
额定功率 2 W
通道数 1
针脚数 6
漏源极电阻 22 mΩ
极性 N-CH
耗散功率 2 W
阈值电压 300 mV
漏源极电压Vds 20 V
漏源击穿电压 20 V
连续漏极电流Ids 7.5A
上升时间 30 ns
输入电容Ciss 1013pF @10VVds
下降时间 5.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Ta
安装方式 Surface Mount
引脚数 6
封装 TSOP-6-6
长度 3 mm
宽度 1.5 mm
高度 1.1 mm
封装 TSOP-6-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC版本 2018/06/27
ECCN代码 EAR99"