INFINEON BSP88H6327XTSA1 晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
表面贴装型 N 通道 350mA(Ta) 1.8W(Ta) PG-SOT223-4
得捷:
MOSFET N-CH 240V 350MA SOT223-4
欧时:
Infineon MOSFET BSP88H6327XTSA1
立创商城:
N沟道 240V 350A
贸泽:
MOSFET N-Ch 240V 350mA SOT-223-3
e络盟:
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
艾睿:
This BSP88H6327XTSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with sipmos technology.
安富利:
Trans MOSFET N-CH 240V 0.35A 4-Pin SOT-223 T/R
Chip1Stop:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R
TME:
Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Verical:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R
Newark:
# INFINEON BSP88H6327XTSA1 MOSFET Transistor, N Channel, 350 mA, 240 V, 4 ohm, 10 V, 1 V
Win Source:
MOSFET N-CH 4SOT223
额定功率 1.8 W
通道数 1
针脚数 4
漏源极电阻 4 Ω
极性 N-Channel
耗散功率 1.8 W
阈值电压 1 V
漏源极电压Vds 240 V
漏源击穿电压 240 V
连续漏极电流Ids 0.35A
上升时间 3.5 ns
输入电容Ciss 95pF @25VVds
下降时间 18.9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 1.8W Ta
安装方式 Surface Mount
引脚数 4
封装 SOT-223-4
长度 6.5 mm
宽度 3.5 mm
高度 1.6 mm
封装 SOT-223-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Communications & Networking, Onboard charger, 车用, 电机驱动与控制, 通信与网络, Automotive, Consumer Electronics, 电源管理, Motor Drive & Control, 消费电子产品
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSP88H6327XTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSP88 L6327 英飞凌 | 功能相似 | BSP88H6327XTSA1和BSP88 L6327的区别 |