STMICROELECTRONICS BD135-16 单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE
通用 NPN ,STMicroelectronics
得捷:
TRANS NPN 45V 1.5A SOT-32
立创商城:
NPN 45V 1.5A
欧时:
### 通用 NPN 晶体管,STMicroelectronics![http://china.rs-online.com/largeimages/R7140483-01.jpg]http://china.rs-online.com/largeimages/R7140483-01.jpg ### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
e络盟:
单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BD135-16 GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans GP BJT NPN 45V 1.5A 3-Pin SOT-32 Tube
Chip1Stop:
Trans GP BJT NPN 45V 1.5A 3-Pin SOT-32 Tube
TME:
Transistor: NPN; bipolar; 50V; 1.5A; 12W; SOT32
Verical:
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin3+Tab SOT-32 Tube
Newark:
# STMICROELECTRONICS BD135-16 Bipolar BJT Single Transistor, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE
儒卓力:
**NPN TRANSISTOR 45V 1,5A SOT32 **
频率 50 MHz
针脚数 3
极性 NPN
耗散功率 12.5 W
击穿电压集电极-发射极 45 V
最小电流放大倍数hFE 40 @150mA, 2V
额定功率Max 1.25 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1250 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
长度 7.8 mm
宽度 2.7 mm
高度 10.8 mm
封装 TO-126-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Audio, 音频
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD135-16 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BD135 意法半导体 | 类似代替 | BD135-16和BD135的区别 |
BD1356S 飞兆/仙童 | 类似代替 | BD135-16和BD1356S的区别 |